Method for designing semiconductor integrated circuit and automatic designing device

ABSTRACT

A program for automatically designing a logic circuit used for a method of designing a pass transistor circuit, by which the number of required transistors, delay time, power consumption and chip area of the pass transistor circuit is reduced. The program executes the following steps: a) receiving inputted logic functions which define the logical relationship between the inputs and the outputs, and an inputted target specification, b) generating a binary decision diagram from part of the logic functions received at (a), c) replacing the diagram nodes formed at (b) with pass transistor circuit, d) judging whether or not the simulation characteristics of the pass transistor circuit described in (c) meets the target specification described in (a), and executing the following steps when the judgment is “no”, e) replacing part of the diagram generated by the procedure described in (b) with another diagram, f) allocating a new binary decision diagram to the control inputs of the nodes of the replaced diagram prepared at (e), and g) repeating the steps (c) and (d) for the diagram prepared at (f).

This is a continuation-in-part application of the followingapplications:

U.S. patent application Ser. No. 08/633,486 filed on Apr. 17, 1996 nowU.S. Pat. No. 5,712,792;

U.S. patent application Ser. No. 08/633,053 filed on Apr. 24, 1996 nowU.S. Pat. No. 5,923,189;

PCT International Application No. PCT/JP96/01104 FILED ON Apr. 24, 1996.

The contents of the first two U.S. patent applications above areincorporated herein by reference.

TECHNICAL FIELD

The present invention relates to a method and an automatic designingdevice for designing semiconductor integrated circuits, and moreparticularly to a designing method and an automatic designing devicesuitable for designing such semiconductor integrated circuits asgeneral-purpose processors, signal processors, video processors, etc.including logic circuits in part.

1. Background Art

In the IEEE TRANSACTIONS ON COMPUTERS, Vol. c-35, No.8, August 1986, pp.677-691 (hereinafter referred to as Cited Reference 1), an effectivemethod for logic operations using binary decision diagrams is disclosed.

Also, Proceedings of 1994 Autumn Convention of the Institute ofElectronics, Information and Communication Engineers of Japan, editionof fundamentals and interfaces, p. 64 (hereinafter referred to as CitedReference 2), shows a configuration method of a pass transistor circuitwhich uses a logic expression called as a binary decision diagram.

2. Disclosure of the Invention

In recent LSI circuit designing practice, automatic designing methodsusing gate arrays, standard cells, FPGA (field programmable gatearrays), PLA (programmable logic arrays), etc. are in widespread use.

As the number of elements which can be integrated in an LSI hasincreased significantly, it has become practically impossible forengineers to design manually such large scale and complex logiccircuits.

FIG. 13(a) shows a concrete example of standard cell scheme forautomatic designing of a logic LSI. In this example, circuits (1304,1305, 1306) having certain functions and already layouted, called ascells (1301, 1302, 1303) are prepared. The LSI has logic circuit areas(1307, 1309, 1311) and interconnected as required over routing areas(1308, 1310), and wirings are formed over cells, if necessary, to attaina desired logic.

As for so-called “macro” circuits having high regularity such asarithmetic circuits and memories, small-scale blocks are designedmanually and these blocks are arranged regularly. In most designingpractice of a LSI chip, the macro circuits thus designed are oftencombined with portions designed by the standard cell scheme or otherautomatic designing scheme except for a case of designing a specific LSIchip dedicated for an arithmetic unit or a memory. An example of thiskind of LSI is shown in FIG. 13(b).

It is desirable that LSI circuits have reduced circuit area, higherspeed in operation and lower consumption in power. Therefore, any ofvarious circuit schemes satisfying these requirements as much aspossible is to be selected. In selection of a circuit scheme on thepremise of automatic designing, however, only such requirements as goodcircuit performance, small circuit area and lower power consumption areinsufficient. That is, automatic designing techniques including logicsynthesis technique, automatic layout technique, etc. for supporting aselected circuit scheme must be established.

At present, automatic designing techniques field-proven for CMOScircuits using N-channel and P-channel field effect transistors incomplementary arrangement and have been adopted prevalently indevelopment of microprocessors, etc.

On the other hand, a pass transistor circuit scheme is known as anadvantageous approach for forming circuits having high speed, small areaand low power consumption. As to automatic designing technology forusing the pass transistor circuit scheme, a logic circuit configurationmethod such as disclosed in Cited Reference 2 is available. In the passtransistor circuit scheme, a given logic function is transformed into alogical expression using a binary decision diagram, nodes in the diagramare further transformed into selectors comprised of pass transistors,and then buffers are inserted to produce a logic circuit (called as apass transistor logic circuit). FIG. 12 shows a pass transistor logiccircuit configuration procedure and an example of a logic circuitconfigured thereby. Since a circuit configuration procedure has beenclearly shown, even a highly complex logic circuit is undoubtedlyrealizable with pass transistors. This signifies that the passtransistor circuit scheme is advantageously applicable to automaticdesigning of LSIs.

As mentioned above, in designing large scale and complex logic LSIs,there is a close relationship between circuit schemes and automaticdesigning techniques, and both can be put into practice only after bothare available. In consideration of this condition, the pass transistorcircuit configuration method disclosed in Cited Reference 2 isadvantageous with respect to an aspect of circuit area, powerconsumption and performance and an aspect of automatic designing.

However, the present inventor's analysis of a pass transistor logiccircuit configured by the method shown in Cited Reference 2, hasrevealed that since the configured pass transistor logic circuitinherits features of binary decision diagrams, only a source input isapplicable as an input from another pass transistor circuit to each passtransistor circuit included in the pass transistor logic circuit.

That is, as a gate input to each pass transistor in the configured passtransistor logic circuit, an input signal of a relevant logic function(or its inverted signal) is applied directly in any case. In thisrespect, the present inventors have found that there are two problemsmentioned below.

The first problem is as follows: In the worst case of this circuitscheme, a signal must go through a number of stages of pass transistorswhich stages are proportional to the number of input signals on whichthe output logic depends, causing an increase in delay time.

The second problem is as follows: Since intrinsically shareable logicare arranged individually, the number of circuit elements is increased.

Therefore, the present inventors have proposed to add a signal supplyingscheme in which an output signal from another pass transistor circuit isalso used as a gate input of a transistor in a pass transistor circuit,in addition to an input signal of a relevant logic function (or itsinverted signal). This makes it possible to provide improvements in thenumber of elements, delay time, circuit area and power consumption,thereby enabling implementation of more complex circuit logic. Examplesof circuits arranged in the above-mentioned scheme are shown in FIGS.4(a) and (b) and 5(a) and (b).

FIGS. 4(a) and (b) show the first problem that delay time increases. Inboth the circuits shown in FIGS. 4(a) and 4(b), the same logic functionis implemented (OUT=A·B·D·E·G·H+A·B·DN·F+A·B·EN·F+AN·C+BN·C, where ‘AN’,etc. represents a negation signal of ‘A’). The circuit shown in FIG.4(a) has been formed using the conventional designing method presentedin Cited Reference 2. In this circuit, delay time of output 401 isdefined as a period of time to be taken from the moment a signal isapplied to input 402 until it reaches the output through path 403. Asindicated in this Figure, the signal must go though five stages of passtransistor 404 to 408.

The circuit shown in FIG. 4(b) has been formed using the semiconductorintegrated circuit designing method in accordance with the presentinvention. In this circuit, delay time of output 409 is defined as aperiod of time to be taken from the moment a signal is applied to input410 until it reaches the output through path 411. As indicated in thisFigure, the signal has only to go through just three stages of passtransistors 412 to 414. In general, a delay time increases with anincrease in the number of pass transistor stages which a signal goesthrough. It is therefore understood that reduction in delay time is notsufficient in the circuit shown in FIG. 4(a), which has been formedusing the conventional designing method.

FIGS. 5(a)and (b) show the second problem that since intrinsicallyshareable logic components are arranged individually, the number ofelements increases, thereby to increase occupied area in the chip andpower consumption.

In both the circuits shown in FIGS. 5(a) and (b), the same logicfunction is implemented (OUT1=A·B·G·H+AN·C+BN·C, OUT2=A·B·G·H+AN·D+BN·D,OUT3=A·B·G·H+AN·E+BN·E, OUT4=A·B·G·H+AN·F+BN·F).

The circuit shown in FIG. 5(a) has been formed using the conventionaldesigning method presented in Cited Reference 2. In this circuit, parts501 to 504 have the same configuration. Although these parts areintrinsically shareable, they are arranged individually and 24transistors are provided in total.

The circuit shown in FIG. 5(b) has been formed using the semiconductorintegrated circuit designing method in accordance with the presentinvention. In this circuit, the intrinsically shareable parts in FIG.5(a) are arranged as a shared part 505, resulting in a total of 18transistors. That is, the total number of transistors in FIG. 5(b) issmaller than that in FIG. 5(a) by 6. In general, as the number oftransistors increases, there is a tendency of increasing circuit areaand power consumption. It is therefore understood that reduction incircuit area and power consumption is not sufficient in the circuitshown in FIG. 5(a), which has been formed using the conventionaldesigning method.

Accordingly, it is an object of the present invention to provide asemiconductor integrated circuit logic designing method to realize logiccircuits which are superior to conventional pass transistor circuits inan operation speed, integration scale and power consumption in designinglogic circuits comprised of pass transistors and having logic functions,by using an automatic designing device.

It is another object of the present invention to provide an automaticdesigning device for generating semiconductor integrated logic circuits,to realize logic circuits which are superior to conventional passtransistor circuits in an operation speed, integration scale and powerconsumption.

To carry out the objects, a logic circuit designing method according tothe present invention (refer to FIGS. 1, 3(a) to (d) and 11) is a methodof designing a logic circuit to be integrated on semiconductor, asimplemented by using a designing device (1101) comprising a centralprocessing unit, a memory device and a man-machine interface device, andis characterized in that a program stored in the memory device executesthe following steps.

(a) A step of having a circuit designer input logic functions (refer to301 in FIG. 3(a)) which are for determining logic relationship betweenlogic inputs and logic outputs and a target specification of delay timesbetween the logic inputs and the logic outputs (refer to 101 in FIG. 1).

(b) A step of forming a binary decision diagram (refer to FIG. 3(b)) asdefined in the following paragraph (b-1) for at least part of inputtedlogic functions (refer to 102 in FIG. 1).

(b-1) The binary decision diagram is one formed by combining a pluralityof nodes (306) each having a control variable (302), two input edges(303, 304) and one output (305), wherein the control variable of eachnode represents a logic input (A) to a relevant logic portion, eitherone of the two input edges of each node is selected according a logicalvalue of the control variable, and a signal applied to the selectedinput edge is transferred to the output of the node (refer to FIG.3(b)).

(c) A step of replacing at least part of a plurality of nodes in thebinary decision diagram formed in the step (b) or in a diagram formed inthe subsequent step (e), with a pass transistor circuit (refer to FIG.3(d)) as defined in the following paragraph (c-1) (refer to 103 in FIG.1).

(c-1) The pass transistor circuit (323) comprises a control input (324),a first input (325), a second input (326), an output (327), a firstfield effect transistor (328) having a source-drain path connectedbetween the first input and the output, and a second field effecttransistor (329) having a source-drain path connected between the secondinput and the output, wherein a gate of the first field effecttransistor (328) responds to a signal applied to the control input (A),a gate of the second field effect transistor (329) responds to aninverted signal of the signal applied to the control input (A), and asignal of either one of the first input and the second input istransferred to the output (refer to FIG. 3(d)).

(d) A step of checking whether simulated delay time of the passtransistor circuit obtained in the step (c) meets the targetspecification given in the step (a), and executing the following steps(e), (f) and (g), if the specification is not met (refer to 104 in FIG.1).

(e) A step of replacing at least plural nodes (refer to FIG. 3(b)) inthe binary decision diagram with one replacing node (refer to FIG. 3(c))so that conditions indicated in the following paragraphs (e-1) and (e-2)are satisfied (refer to 105 in FIG. 1).

(e-1) An external group of tips of input edges of the replacing nodes,of the diagram after the replacing (refer to 312, 313 and 314 in FIG.3(c)) coincides with an external group of tips of input edges ofrelevant plural nodes, of the binary decision diagram before thereplacing (refer to 308, 309 and 310 in FIG. 3(b)).

(e-2) A signal of the control variable of the replacing node in thediagram after the replacing is logical combination of plural signals forcontrol variables of relevant plural nodes in the binary decisiondiagram before the replacing, so that a condition is kept that logicfunctions of the binary decision diagram after the replacing areidentical to logic functions of the binary decision diagram before thereplacing.

(f) A step of replacing at least part of nodes in the diagram after thereplacing in the step (e) with the pass transistor circuit (refer toFIG. 3(d)), using the procedure in the step (c), so that the followingsignal supplying schemes are adopted.

With first, second and third pass transistor circuits defined in theparagraph (c-1) in relation to one replacing node after the replacing inthe diagram after the replacing, a first signal supplying scheme isadopted between the first and the second pass transistor circuits, inwhich an input signal applied to a control input of one pass transistorcircuit (322) is a signal of an output of other pass transistor circuit(323), and a second signal supplying scheme is adopted between thesecond and the third pass transistor circuits, in which an input signalapplied to either one of the first input and the second input of onepass transistor circuit (322) is a signal of an output of other passtransistor circuit (321) (refer to FIG. 3(d)).

(g) A step of checking whether simulated delay time with the passtransistor circuit obtained in the step (f) meets the targetspecification given in the step (a) by using procedure in the step (d).

To carry out the objects, another logic circuit designing methodaccording to the present invention (refer to FIGS. 2, 8 and 11) is amethod of designing a logic circuit to be integrated on semiconductor,as implemented by using an automatic designing device (1101) comprisinga central processing unit, a memory device and a man-machine interfacedevice, and is characterized in that a program stored in the memorydevice executes the following steps.

(a) A step of having logic functions (refer to 801 in FIG. 8(a)) beinginputted which are for determining logic relationship between logicinputs and logic outputs and a target specification of at least one ofan occupied area in a chip and power consumption of the logic circuit(refer to 201 in FIG. 2).

(b) A step of forming a binary decision diagram (refer to FIG. 8(b)) asdefined in the following paragraph (b-1) for at least part of the logicfunctions as given by a designer (refer to 202 in FIG. 2).

(b-1) The binary decision diagram is one formed by combining a pluralityof nodes each having a control variable (302), two input edges and oneoutput, wherein the control variable of each node represents a logicinput to a relevant logic portion, either one of the two input edges ofeach node is selected according a logical value of the control variable,and a signal applied to the selected input edge is transferred to theoutput of the node.

(c) A step of replacing at least part of a plurality of nodes in thebinary decision diagram formed in the step (b) or in a diagram formed inthe subsequent step (e), with a pass transistor circuit (refer to FIG.8(d)) as defined in the following paragraph (c-1) (refer to 203 in FIG.2).

(c-1) The pass transistor circuit comprises a control input, a firstinput, a second input, an output, a first field effect transistor havinga source-drain path connected between the first input and the output,and a second field effect transistor having a source-drain pathconnected between the second input and the output, wherein a gate of thefirst field effect transistor responds to a signal applied to thecontrol input, a gate of the second field effect transistor responds toan inverted signal of the signal applied to the control input, and asignal of either one of the first input and the second input istransferred to the output.

(d) A step of checking whether at least one of a simulated occupied areaand simulated power consumption of the pass transistor circuit obtainedin the step (c) meets the target specification given in the step (a),and executing the following steps (e), (f) and (g), if the specificationis not met (refer to 204 in FIG. 2).

(e) A step of replacing at least plural groups of nodes in the binarydecision diagram with replacing nodes (refer to 817, 818, 819 and 820 inFIG. 8(c)) and a group of shared nodes (refer to 825 in FIG. 8(c)) sothat conditions indicated in the following paragraphs (e-2) and (e-3)are satisfied (refer to 205 in FIG. 2).

(e-1) Each node group within plural node groups before the replacing(refer to 805, 806, 807 and 808 in FIG. 8(b)) comprises a plurality ofnodes, wherein a mutual coupling form and an input signal for a controlvariable of the plural node groups before the replacing is identical toeach other.

(e-2) An output of a group of shared nodes (refer to 825 in FIG. 8(c))is applied as a control variable for plural replacing nodes after thereplacing (refer to 817, 818, 819, and 820 in FIG. 8(c)), so that acondition is kept that logic functions of the binary decision diagramafter the replacing are identical to logic functions of the diagrambefore the replacing, wherein the group of shared nodes (refer to 825 inFIG. 8(c)) corresponds to the plural nodes (refer to 805, 806, 807 and808 in FIG. 8(b)) among which the mutual coupling form before thereplacing and an input signal for a control variable are identical toeach other.

(e-3) An external group of tips of input edges of plural replacing nodes(refer to 817, 818, 819 and 820 in FIG. 8(c)), of the diagram after thereplacing (refer to FIG. 8(c)) coincides with an external group of tipsof input edges of relevant plural groups of nodes (refer to 805, 806,807 and 808 in FIG. 8(b)), of the binary decision diagram before thereplacing (refer to FIG. 8(b)).

(f) A step of replacing at least part of nodes in the diagram after thereplacing in the step (e) with pass transistor circuit s(refer to FIG.8(d)), by using the procedure in the step (c), so that the followingsignal supplying schemes are adopted.

With first, second and third pass transistor circuits defined in theparagraph (c-1) in relation to plural replacing nodes after thereplacing in the diagram after the replacing (refer to 817, 818, 819 and820 in FIG. 8(c)), a first signal supplying scheme is adopted betweenthe first and the second pass transistor circuits, in which an inputsignal applied to a control input of one pass transistor circuit (840,841) is a signal of an output of other pass transistor circuit (844,845), and a second signal supplying scheme is adopted between the secondand the third pass transistor circuits, in which an input signal appliedto either one of the first input and the second input of one passtransistor circuit (840, 841) is a signal of an output of other passtransistor circuit (842, 843) (refer to FIG. 8(d)).

(g) A step of checking whether at least either one of a simulatedoccupied area in the chip and simulated power consumption with the passtransistor circuit obtained in the step (f) meets the targetspecification given in the step (a) by using procedure in the step (d).

In accordance with the present invention as mentioned above, it ispossible to implement more complex logic, by adding a signal supplyingscheme in which an output signal from another pass transistor circuit isalso applied as a transistor gate input of a pass transistor circuit inaddition to an input signal (or its inverted signal) of a target logicfunction. It is further possible to automatically design semiconductorintegrated logic circuits meeting target specifications such as delaytime, an occupied area in the chip, power consumption etc. through useof an automatic designing device. Therefore, the foregoing objects ofthe invention can be accomplished.

The other objects and features of the present invention will becomeapparent from the following embodiments.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a flowchart 1 showing a logic circuit designing methodaccording to a preferred embodiment of the present invention;

FIG. 2 is a flowchart 2 showing a logic circuit designing methodaccording to another preferred embodiment of the present invention;

FIGS. 3(a), 3(b), 3(c) and 3(d) show the procedure of a logic circuitdesigning method of the present invention and a circuit generatedthereby;

FIGS. 4(a) and 4(b) compare a circuit generated in a conventional methodand a circuit generated according to the present invention;

FIGS. 5(a) and 5(b) also compare a circuit generated according to aconventional method and a circuit generated according to the presentinvention;

FIGS. 6(a), 6(b) and 6(c) show the procedure of a conventional designingmethod and an example of circuit generated thereby;

FIGS. 7(a), 7(b) and 7(c) show the procedure of a conventional designingmethod and an example of circuit generated thereby;

FIGS. 8(a), 8(b), 8(c), 8(d) and 8(e) show the procedure of a designingmethod according to the present invention and an example of circuitgenerated thereby;

FIGS. 9(a), 9(b), 9(c), 9(d), 9(e), 9(f), 9(g) and 9(h) show theprocedure of a logic circuit designing method of the present inventionto 16 input logical AND function and an example of circuit generatedthereby;

FIG. 10 is a truth table showing the logic function indicated in FIG.8(d);

FIG. 11 shows a logic circuit designing device according to anembodiment of the present invention;

FIG. 12 shows the procedure of a conventional designing method; and

FIGS. 13(a) and 13(b) show an example of a logic LSI automaticallydesigned according to an embodiment of the present invention.

BEST MODES FOR CARRYING OUT THE INVENTION

Referring to FIG. 1, there is shown a logic circuit designing method fora semiconductor integrated circuit according to an embodiment of thepresent invention.

The design method according to this embodiment is a method of designinga logic circuit to be integrated on a semiconductor, as implemented byusing an automatic designing device (1101) shown in FIG. 11, whichcomprises a central processing unit (CPU) (not shown), a memory device(including a main memory, hard disk storage, etc.) (not shown) and aman-machine interface devices (including a keyboard, display monitor,touch-sensitive panel, etc.) (not shown). The method has feature that aprogram held in the memory device (not shown) of the automatic designingdevice (1101) executes the following steps and automatically designs alogic circuit to be integrated on semiconductor.

Step 101 in FIG. 1: In this step 101, (a) a logic function fordetermining logic relationship between logic inputs and logic outputs asshown by 301 in FIG. 3(a) and a design target specification of delaytime between the inputs and the outputs are inputted by a designer.

Step 102 in FIG. 1: In this step 102, (b) a binary decision diagramdefined in the following step (b-1) as shown in FIG. 3(b) is formed forat least part of the logic functions given by the designer.

(b-1) The binary decision diagram is generated by combining a pluralityof nodes (306, 306B, 306D, 306E and 308 to 310) each having a controlvariable (302), two input edges (303, 304) and one output (305) as shownin FIG. 3(b), wherein a control variable of each node represents a logicinput (A) to a relevant logic part, either one of two input edges ofeach node is selected according to a logic value of the controlvariable, and a signal applied to the selected input edge is transferredto the output of each node.

Step 103 in FIG. 1: In this step 103, (c) at least part of nodes in thebinary decision diagram formed in the above step 102 or in a diagramformed in the, wherein each pass transistor circuit is defined in thefollowing paragraph (c-1) and shown by the circuit 323 in FIG. 3(d).

(c-1) The pass transistor circuit (323) comprises a control input (324),a first input (325), a second input (326), an output (327), a firstfield effect transistor (328) having a source-drain path connectedbetween the first input and the output, and a second field effecttransistor (329) having a source-drain path connected between the secondinput and the output, as shown in FIG. 3(d), wherein a gate of the firstfield effect transistor (328) responds to a signal applied to thecontrol input (A), a gate of the second field effect transistor (329)responds to an inverted signal of the signal applied to the controlinput (A), and a signal from either one of the first input and thesecond input is transferred to the output (refer to the circuit 323 inFIG. 3(d)).

Step 104 in FIG. 1: In this step 104, (d) it is checked whethersimulated delay time of the pass transistor logic circuit (not shown)attained in the above step 103 (c) meets the target specification ofdelay time given in the above step (a). If the target specification isnot met, the following steps (e), (f) and (g) are carried out (refer to104 in FIG. 1).

Step 105 in FIG. 1: In this step 105, (e) at least plural nodes in thebinary decision diagram formed in the above step 103 as shown in FIG.3(b) are replaced with one replacing node as shown in FIG. 3(c), so thatconditions indicated in the following paragraphs (e-1) and (e-2) aresatisfied.

(e-1) An external group of tips of input edges of the replacing node, ofthe diagram after the replacing (refer to 312, 313 and 314 in FIG. 3(c))coincides with an external group of tips of input edges of relevantplural nodes, of the binary decision diagram before the replacing (referto 308, 309 and 310 in FIG. 3(b)).

(e-2) A signal for the control variable of the replacing node in thediagram after the replacing is a logic combination of plural signals forcontrol variables (A, B) of relevant plural nodes in the binary decisiondiagram before the replacing so that the logic function of the diagramafter the replacing as shown in FIG. 3(c) is identical to the logicfunction of the binary decision diagram before the replacing as shown inFIG. 3(b).

Step (f): In this step (f), at least part of nodes in the diagram afterthe replacing in the above step 105 (e) of step 105 in FIG. 1 arereplaced with the pass transistor circuit (refer to FIG. 3(d)), by usingthe procedure in the above step 103 (c).

As a result, in the first, the second and the third pass transistorcircuits defined in the above step (c-1) in relation to one replacingnode in the diagram after the replacing, a first signal supplying schemeis adopted between the first and the second pass transistor circuits, inwhich an input signal applied to control input of one pass transistorcircuit (322) is an output signal of the other pass transistor circuit(323), and a second signal supplying scheme is adopted between thesecond and the third pass transistor circuits, in which an input signalapplied to either one of the first input and the second input of onepass transistor circuit (322) is an output signal of the other passtransistor circuit (321) as shown in FIG. 3(d).

Step (g): In this step (g), it is checked by using the procedure in theabove step 104 (d) whether simulated delay time of the pass transistorcircuit attained in the above step (f) meets the target specificationgiven in the above step (a).

If the simulation delay time does not meet the target specificationgiven in the above step 101 (a), the above steps (e), (f) and (g) arerepeated.

Referring to FIG. 2, there is shown a logic circuit designing method fora semiconductor integrated circuit according to another embodiment ofthe present invention.

The design method according to this embodiment shown in FIG. 2 is also amethod for designing a logic circuit to be integrated on semiconductor,similarly to the embodiment in FIG. 1, by using an automatic designingdevice (1101) shown in FIG. 11, which comprises a central processingunit (CPU), a memory device (including a main memory, hard disk storage,etc.) and a man-machine interface devices (including a keyboard, displaymonitor, touch-sensitive panel, etc.). The method has a feature that aprogram held in the memory device of the automatic designing device(1101) executes the following steps, and automatically designs a logiccircuit to be integrated on semiconductor.

Step 201 in FIG. 2: In this step 201, (a) a logic function fordetermining logic relationship between logic inputs and logic outputs asshown by 801 in FIG. 8(a) and a target specification of at least eitherone of occupied area in the chip and power consumption of relevant logiccircuit are inputted.

Step 202 in FIG. 2: In this step 202, (b) a binary decision diagramdefined in the following step (b-1) as shown in FIG. 8(b) is preparedfor at least part of the logic functions given by a designer.

(b-1) The binary decision diagram is generated by combining a pluralityof nodes each having a control variable (302) and two input edges andone output, wherein a control variable at each node represents a logicinput to a relevant logic part, either one of the two input edges isselected according to a logic value of the control variable, and asignal applied to the selected input edge is transferred to the outputof each node.

Step 203 in FIG. 2: In this step 203, (c) at least a part of nodes inthe binary decision diagram formed in the above step 202 (b) or in adiagram formed in the subsequent step (e) are replaced with a passtransistor circuit defined in the following step (c-1) and shown in FIG.8(d).

(c-1) The pass transistor circuit comprises a control input, a firstinput, a second input, an output, a first field effect transistor havinga source-drain path connected between the first input and the output,and a second field effect transistor having a source-drain pathconnected between the second input and the output, wherein a gate of thefirst field effect transistor responds to a signal applied to thecontrol input, a gate of the second field effect transistor responds toan inverted signal of the signal applied to the control input, and asignal from either one of the first input and the second input istransferred to the output.

Step 204 in FIG. 2: In this step 204, (d) it is checked whether at leasteither one of simulation values of occupied area in the chip and powerconsumption of the pass transistor circuit attained in the above step203 (c) meets the target specification given in the above step 201 (a).If the specification is not met, the following steps (e), (f) and (g)are carried out.

Step 205 in FIG. 2: In this step 205, (e) at least plural node groups ofnodes in the binary decision diagram formed in the above step 102 asshown by 805, 806, 807 and 808 in FIG. 8(b), which satisfy the conditionindicated in the following paragraph (e-1), are replaced with replacingnodes as shown by 817, 818, 819 and 820 in FIG. 8(c) and a group ofshared nodes as shown by 825 in FIG. 8(c) so that the conditionsindicated in the following paragraphs (e-2) and (e-3) are satisfied.

(e-1) Each node group of plural node groups before the replacing (referto 805, 806, 807 and 808 in FIG. 8(b)) comprises a plurality of nodes,and a mutual coupling form of plural node groups before the replacingand control variable input signals are identical to each other.

(e-2) An output of a group of shared nodes (refer to 825 in FIG. 8(c))is applied, as control variables for plural nodes after the replacing(refer to 817, 818, 819 and 820 in FIG. 8(c)), so that the logicfunctions of the diagram after the replacing are kept identical with thelogic functions of the binary decision diagram before the replacing, andthe group of shared nodes (refer to 825 in FIG. 8(c)) corresponds to theplural nodes (refer to 805, 806, 807 and 808 in FIG. 8(b)) where themutual coupling form before the replacing and an input signal for acontrol variable are identical with each other.

(e-3) An external group of tips of input edges of plural replacing nodes(refer to 817, 818, 819 and 820 in FIG. 8(c)), of the diagram after thereplacing (refer to FIG. 8(c)) coincides with an external group of tipsof input edges of relevant plural nodes (refer to 805, 806, 807 and 808in FIG. 8(b)), of the binary decision diagram before the replacing(refer to FIG. 8(b)).

Step (f): In this step (f), at least part of nodes in the diagram afterthe replacing by the above step 205 (e) are replaced with the passtransistor circuit, by using the procedure in the above step 203 (c), sothat the following signal supplying schemes are adopted.

For the first, the second and the third pass transistor circuits definedin the above step (c-1) in relation to plural replacing node after thereplacing (refer to 817, 818, 819 and 820 in FIG. 8(c)) in the diagramafter the replacing, a first signal supplying scheme is adopted betweenthe first and the second pass transistor circuits, in which an inputsignal applied to control input of a pair of pass transistor circuits(840, 841) is an output signal of another pass transistor circuits (844,845), and a second signal supplying scheme is adopted between the secondand third pass transistor circuits, in which an input signal applied toeither one of the first input and the second input of a pair of passtransistor circuits (840, 841) is an output signal of another passtransistor circuits (842, 843) (refer to FIG. 8(d)).

Step (g): In this step (g), it is checked by using the procedure in theabove step (d) whether a simulation value of at least either one ofoccupied area in the chip and power consumption of the pass transistorcircuit attained in the above step (f) meets the target specificationgiven in the above step (a).

If the simulation value of at least either one of occupied area in thechip and power consumption does not meet the target specification givenin the above step 201 (a), the above steps (e), (f) and (g) arerepeated.

The following describes principles that a pass transistor circuitconfigured by a designing method embodied in the present invention ishigher in an operation speed, smaller in circuit area and lower in powerconsumption than those of a conventional circuit, with reference toFIGS. 3(a) to (d), 6(a) to (c), 7(a) to (c) and 8(a) to (e).

FIGS. 3(a) to (d) and 6(a) to (c) show the procedure of designing thesame logic functions (301, 601) designed by a conventional method and adesigning method according to the present invention, respectively.

A circuit in FIG. 6(c) is formed using the configuration methoddisclosed in Cited Reference 2 in the order of FIGS. 6(a), 6(b) and6(c). That is, a logic function (601) given in FIG. 6(a) is transformedinto a binary decision diagram shown in FIG. 6(b). Each node in thebinary decision diagram is further transformed into a selector comprisedof pass transistors. Thus, a circuit shown in FIG. 6(c) is attained. Inthis circuit, if a transfer path of a signal imposing delay constraint(critical path) corresponds to a path (604) from input H (603) to outputOUT (602), the signal must go through five stages of transistors (605,606, 607, 608, 609) along the path.

On the other hand, a circuit formed by using the designing method of thepresent invention is shown in FIG. 3(d). The circuit is formed in theorder of FIGS. 3(a), 3(b), 3(c) and 3(d). That is, a logic function(301) given in FIG. 3(a) is transformed into a binary decision diagramshown in FIG. 3(b). Then, a partial diagram (307) corresponding to acircuit not meeting a required specification on delay time is extractedfrom the binary decision diagram, and the extracted partial diagram isreplaced with another diagram (311) shown in FIG. 3(c). Finally, eachnode in the diagram (311) is transformed into a pass transistor circuitto provide a circuit shown in FIG. 3(d). In this circuit, an inputsignal has only to pass through just three stages of transistors (320,321, 322) along a path (319) from input H (318) to output OUT (317). Ingeneral, delay time in a circuit increases with increase in the numberof stages of transistors through which an input signal passes.Therefore, by decreasing the number of stages of transistors along acritical path of signal transfer as exemplified in this embodiment,delay time can be decreased to improve the speed of the circuitoperation.

Then, the following describes principles that reduction in circuit areaand power consumption can be realized in a logic circuit formed using adesigning method according to the present invention, with reference toFIGS. 7(a) to (c) and 8(a) to (e).

FIG. 7(c) shows a circuit synthesized using the configuration methoddisclosed in Cited Reference 2. The circuit synthesizing procedure is asfollows. First, a logical expression given by a designer (701, 702, 703and 704 in FIG. 7(a)) is transformed into a binary decision diagram(FIG. 7(b)). In this case, inputs given by the designer are A, B, C, D,E and F, and outputs are OUT1, OUT2, OUT3 and OUT4. Then, each of edgesselected by ‘1’ issued by nodes in the diagram (705, 707, 709, 711, 713,715, 717, 719, 721) or each of edges selected by ‘0’ (706, 708, 710,712, 714, 716, 718, 720, 722) is respectively replaced with a passtransistor (723, 725, 727, 729, 731, 733, 735, 737, 739) which iscontrolled by a non-inverted signal of an input to a relevant logicfunction corresponding to a control variable for the node or a passtransistor (724, 726, 728, 730, 732, 734, 736, 738, 740) which iscontrolled by an inverted signal of the input. In practicing theinvention, each replacing pass transistor may be a plurality oftransistors connected in parallel. If tips of edges respectivelyselected by ‘1’ and ‘0’ correspond to terminal nodes 1 and 0respectively, an input signal of the control variable is applied intactinstead of replacing each edge by a pass transistor. Also, if tips ofedges respectively selected by ‘1’ and ‘0’ correspond to terminal nodes0 and 1 respectively, an inverted input signal of the control variableis applied. In some cases, for improvement in the circuit operation, avoltage or current amplifier circuit may be inserted depending upon thenumber of stages of series connection of pass transistors or an outputbranching condition. For the purpose of simplicity in description, noamplifier circuit is inserted in the exemplary embodiment.

On the other hand, a logic circuit synthesized according to thedesigning method of the embodiment of the present invention is shown inFIG. 8(d). The circuit synthesizing procedure is shown in FIGS. 8(a),8(b), 8(c) and 8(d) in order. First, as in the conventional method, agiven logical expression (a) is transformed into a binary decisiondiagram (b). Then, partial diagrams (805, 806, 807, 808) in the binarydecision diagram are extracted through automatic determination. Theextracted partial diagrams are replaced with other diagrams (817, 818,819, 820; diagrams in which the number of nodes is ‘1’ because ofsimplicity in example) while meeting the following conditions (1) and(2), and the output (825) of another binary decision diagram differentfrom (a) is further applied to the control inputs (821, 822, 823, 824)of relevant nodes in these diagrams so that a function identical with alogic function given by a designer is provided in total.

(1) A group of tips respectively pointing outside of the diagram beforethe replacing, among tips of edges of all the nodes included in thediagram after the replacing coincide with a group of tips respectivelypointing outside of the diagram before the replacing, among tips ofedges of all the nodes included in the diagram before the replacing.

(2) The diagram after the replacing includes at least one node which hasthe same configuration as a node in the binary decision diagram, but hasa control variable different from an input to a relevant part to bereplaced.

Then, each of edges selected by ‘1’ or ‘0’ issued by nodes in thediagram is replaced with a pass transistor (834, 835, 836, 837, 838,839, 840, 841, 842, 843, 844, 845) which responds to a non-invertedsignal or an inverted signal of a control variable or a control input ofthe node. Thereafter, for improvement in circuit operation, a voltage orcurrent amplifier circuit may be inserted as required. In this case, itis necessary to adjust the number of stages of series connection of passtransistors for which the amplifier circuit is inserted according torequirement.

In the example mentioned above, the number of transistors contained inthe circuit shown in FIG. 8(d) is 18, which is smaller than the numberof transistors contained in the circuit shown in FIG. 7(c), therebycontributing to reduction in circuit area and power consumption. Thenumber of pass transistors (with counting transistors connected inparallel as one transistor) in the above arrangement is equal to thenumber of edges extending from nodes in the diagram. Therefore, inpracticing the invention for the purpose of reduction in circuit areaand power consumption, it is preferable to perform the replacing todecrease the number of nodes in order to decrease the number oftransistors. For the replacing through which the number of nodes isdecreased while meeting the above conditions (1) and (2), it isnecessary to make arrangement so that tips of edges extending from atleast two different nodes contained in relevant partial diagrams directto the same point because of the following reason: If different nodesdirecting to the same point are not contained in the partial diagram,the number of nodes is determined definitely according to the abovecondition (2), and therefore it is not possible to decrease the numberof nodes. In this example, reduction in circuit area and powerconsumption can be made in accordance with the present invention. Inaddition, improvement in delay time can be made in practicalimplementation. Assuming that arrival time of input H is later thanother signals, a signal propagating from input H to each output goesthrough three stages of pass transistors in the circuit shown in FIG.7(c), whereas it goes through two stages of pass transistors in thecircuit shown in FIG. 8(d). Since the delay time decreases with thedecrease in the number of transistors which a signal goes through, it isalso possible to make improvement in delay time.

Referring to FIG. 8(e), there is shown a circuit which is formed byinserting a CMOS inverter amplifier circuit (846) at the output ofanother pass transistor circuit to be used for a gate input of a passtransistor in the circuit shown in FIG. 8(d). In this arrangement, apotential level thereof can be increased sufficiently to a level ofpower supply voltage. Since a steady-state current does not flow throughthis circuit, power consumption can be also reduced. The number oftransistors contained in the circuit is 21, which is still smaller thanthe number of transistors contained in the circuit shown in FIG. 7(c).

The binary decision diagram used at the first step in the designingmethod according to the embodiment of the present invention is the sameas that employed in Cited Reference 1. It is to be understood that thepresent invention is also applicable to a case where a well-known binarydecision diagram containing nodes with negation edges is used.

FIG. 11 shows an example in which an automatic designing system inaccordance with the present invention is employed for LSI designing.Using a designing method of the present invention on this system, it ispossible to generate pass transistor circuits, information oninter-element connection, and information on inter-element-groupconnection, which are delivered as output data to a designer. In thissituation, if mask pattern information of each element or element groupis registered in the automatic designing system, it is also possible toautomatically generate a mask pattern of an entire logic circuit bycombining patterns of elements or element groups. Still more, simulationcan be performed to determine values of delay time, occupied area in thechip and power consumption in the synthesized logic circuit. Data valuesattained in simulation are automatically examined to check if thesevalues meet specified design target values. If the result ofdetermination is negative, an optimum logic circuit can be designedusing the procedures shown in FIGS. 1 and 2.

Referring to FIG. 8(d), there is shown a preferred embodiment in which acircuit having four logic functions is formed using a logic circuitconfiguration method according the present invention. FIG. 8(a) showsthe logic functions in logical expression. The circuit configurationmethod procedure described hereinabove is applicable. The followingdescribes how actually given logic functions are implemented in thecircuit shown in FIG. 8(d). First, it will be confirmed that a logicfunction OUT1 is implemented properly. For ease of understanding, atruth table of the logic function OUT1 is shown in FIG. 10. Outputvalues for each input pattern in this truth table will be checkedagainst outputs of the circuit in FIG. 8(d) to confirm that they areidentical.

First, when input A is ‘0’ (on the top 16 rows in the truth table), passtransistor 844 in the circuit shown in FIG. 8(d) turns on to turn onpass transistor 834, causing output OUT1 to become conductive with inputC. Therefore, when input C is ‘0’ (on the 1st to 4th rows, and 9th to12th rows), OUT1 becomes ‘0’. On the other hand, when input C is ‘1’ (onthe 5th to 8th rows, and 13th to 16th rows), OUT1 becomes ‘1’. Theseconditions meet the output values in the truth table.

Then, when input A is ‘1’ and input B is ‘0’ (on the next 8 rows in thetruth table), pass transistor 845 in the circuit shown in FIG. 8(d)turns on to turn on the pass transistor 834, causing output OUT1 tobecome conductive with input C. Therefore, when input C is ‘0’ (on the17th to 20th rows), OUT1 becomes ‘0’. On the other hand, when input C is‘1’ (on the 21st to 24th rows), OUT1 becomes ‘1’. These conditions alsomeet the output values in the truth table.

Then, when input A is ‘1’, input B is ‘1’, input C is ‘0’ and input G is‘0’ (on the next two rows in the truth table), the pass transistor 845in the circuit shown in FIG. 8(d) turns on to turn on pass transistors835 and 842, causing output OUT1 to become conductive with ground.Therefore, OUT1 becomes ‘0’. These conditions meet the output values inthe truth table.

Then, when input A is ‘1’, input B is ‘1’, input C is ‘0’ and input G is‘1’ (on the next two rows in the truth table), the pass transistor 845in the circuit shown in FIG. 8(d) turns on to turn on pass transistors835 and 843, causing output OUT1 to become conductive with input H.Therefore, when input H is ‘0’ (the 27th row), OUT1 becomes ‘0’. On theother hand, when input H is ‘1’ (on the 28th row), OUT1 becomes ‘1’.These conditions meet the output values in the truth table.

Then, when input A is ‘1’, input B is ‘1’, input C is ‘1’ and input G is‘0’ (on the next two rows in the truth table), the pass transistor 845in the circuit shown in FIG. 8(d) turns on to turn on the passtransistors 835 and 842, causing output OUT1 to become conductive withground. Therefore, OUT1 becomes ‘0’. These conditions meet the outputvalues in the truth table.

Then, when input A is ‘1’, input B is ‘1’, input C is ‘1’ and input G is‘1’ (on the next two rows in the truth table), the pass transistor 845in the circuit shown in FIG. 8(d) turns on to turn on pass transistors835 and 843, causing output OUT1 to become conductive with input H.Therefore, when input H is ‘0’ (the 31st row), OUT1 becomes ‘0’. On theother hand, when input H is ‘1’ (on the 32nd row), OUT1 becomes ‘1’.These conditions meet the output values in the truth table.

As mentioned above, it can be confirmed that the logic function OUT1 ofthe four output logic functions is implemented properly in the circuitformed according to the present invention. As to other three outputlogic functions (OUT2, OUT3 and OUT4), it is obvious that these logicfunctions are implemented properly in the circuit formed according tothe present invention.

Referring to FIG. 9(f), there is shown a preferred embodiment in which acircuit having a 16-bit logical AND function is formed using a logiccircuit designing/configuration method according to the presentinvention. Through use of this example, it is demonstrated that acircuit formed according to the present invention provides asignificantly advantageous effect on reduction in delay time. Thecircuit configuration method according to the present invention is alsodescribed in detail with reference to this example. The followingdescription is based on the assumption that input Q of 16-bit logicalAND inputs is fed from output of another logical block through which acertain delay time has been involved and arrival time of input Q islater than other input signals.

First, according to the procedure of the present invention, a binarydecision diagram (FIG. 9(b)) is prepared using a logic functionexpression (FIG. 9(a)). Then, a partial diagram, 902 in this example,which has the same group of tips of edges pointing outside of thediagram is extracted from the binary decision diagram, and the partialdiagram 902 is replaced with another diagram 903. For a control signalfor these nodes, the output of another diagram 904 is given to providethe same logic function as the original (FIG. 9(c)).

The diagram shown in FIG. 9(c) may be transformed into a pass transistorcircuit. In this example, the procedure mentioned above is carried outrecursively on the assumption that it is necessary to shorten a delaytime further. That is, the above-mentioned procedure is performed oneach of diagrams having output 904 and output 905. First, among partialdiagrams having output 904, a partial diagram having the same group oftips of edges pointing outside of the diagram, i.e., partial diagram 906is extracted and replaced with another graph 908 as shown in FIG. 9(d).For a control signal for these nodes, output of another diagrams, 910 inthis example, is given to provide the same logic function as theoriginal. Also, among partial diagrams having output 905, a partialdiagram having the same group of tips of edges pointing outside of thediagram, i.e., partial diagram 907 is extracted and replaced withanother diagram 909 as shown in FIG. 9(d). For a control signal forthese nodes, output of another diagram 911 is given to provide the samelogic function as the original.

The above procedure is repeated recursively to provide an arrangementshown in FIG. 9(e). At this step, each of all the nodes of pluraldiagrams formed finally is replaced with a source-drain path of a passtransistor, and a non-inverted signal/inverted signal of a controlvariable of each node is given to the relevant gate terminal, therebysynthesizing a pass transistor circuit shown in FIG. 9(f).

For evaluating of the degree of improvement in delay time, the followingcompares circuits generated by the conventional designing method and thedesigning method of the present invention. FIG. 9(h) shows aconventional circuit formed by the conventional designing method. Asshown in this Figure, there are provided 15 stages of pass transistorsalong a transfer path (920) which a signal determining delay time goesthrough. In the circuit formed by the designing method of the presentinvention, there are only four stages of pass transistors along atransfer path (912) through which a signal determining delay time goes.In this case, time required for propagation through 11 stages of passtransistors can be eliminated in the circuit formed by the designingmethod of the present invention.

FIG. 9(g) shows an embodiment of circuit in which voltage amplifiercircuits (913, 914, 915, 916, 917, 918, 919) are inserted to prevent aflow of steady-state current in the circuit arrangement shown in FIG.9(f) so that a potential of the gate input is increased sufficiently topower supply voltage level when the gate of the pass transistor gatereceives an output from another pass transistor.

Having described our invention as related to the embodiments shown inthe accompanying drawings, it is to be understood that the invention isnot limited to the specific embodiments and that various changes andmodifications may be made in the invention without departing from thespirit and scope thereof.

For instance, in the embodiment shown in FIG. 1 or 2, after a loopthrough steps 103, 104 and 105 or a loop through steps 203, 204 and 205is carried out at least once, if a target specification is not met inthe second loop execution, the program may be terminated to meet anyrequired limitation on CPU time, memory allocation for the program, etc.Even in this case, it is to be understood that the first loop executionis covered by the technical scope of the present invention. Also, thetermination of the program in case that a target specification is notmet in the second loop execution is regarded as an effectivemodification of the target specification in step 101 or step 201, whichis also covered by the technical scope of the present invention.

In another modified embodiment of the present invention, field effecttransistors for configuring pass transistor circuits are not limited toMOSFETs made of silicon, but MESFETs comprised of GaAs compoundsemiconductor may be used instead.

Still more, it will be obvious to those skilled in the art that passtransistor logic circuits formed in accordance with the presentinvention are applicable to such LSI devices as general-purposeprocessors, signal processors, video processors, etc. in order to reduceentire power consumption and delay time by providing random logicfunctions for interpreting RISC-type instructions in control of aninstruction execution unit, for example.

According to the present invention, there is provided a logic circuitdesigning method for configuring semiconductor integrated passtransistor circuits which need a smaller number of necessarytransistors, and are capable of reducing power consumption and delaytime and implementing more complex logic functions.

What is claimed is:
 1. A method of designing a logic circuit to beintegrated on semiconductor, as implemented by using a designing devicecomprising a central processing unit, a memory device and a man-machineinterface device, characterized in that a program stored in the memorydevice executes the following steps of: (a) having logic functions beinginputted which are for determining logic relationship between logicinputs and logic outputs and a target specification of delay timesbetween the logic inputs and the logic outputs; (b) forming a binarydecision diagram as defined in the following paragraph (b-1) for atleast part of the logic functions as inputted; (b-1) the binary decisiondiagram being one formed by combining a plurality of nodes each having acontrol variable, two input edges and one output, wherein the controlvariable of each node represents a logic input to a relevant logicportion, either one of the two input edges of each node is selectedaccording a logical value of the control variable, and a signal appliedto the selected input edge is transferred to the output of the node; (c)determining a pass-transistor logic circuit which includes a pluralityof pass-transistor circuits each corresponding to one of at least partof a plurality of nodes in the binary decision diagram formed in thestep (b), each pass transistor circuit being one defined in thefollowing paragraph (c-1); (c-1) the pass transistor circuit comprisinga control input, a first input, a second input, an output, a first fieldeffect transistor having a source-drain path connected between the firstinput and the output, and a second field effect transistor having asource-drain path connected between the second input and the output,wherein a gate of the first field effect transistor responds to a signalapplied to the control input, a gate of the second field effecttransistor responds to an inverted signal of the signal applied to thecontrol input, and a signal of either one of the first input and thesecond input is transferred to the output; (d) checking whethersimulated delay time of the pass-transistor logic circuit obtained inthe step (c) meets the target specification given in the step (a), andexecuting the following steps (e), (f) and (g), if the targetspecification is not met; (e) replacing at least one partial diagramwhich includes plural nodes, in the binary decision diagram, with onereplacing node and a group of nodes which provide a control variable tosaid one node, said one node and said group of nodes satisfyingconditions indicated in the following paragraphs (e-1) and (e-2); (e-1)a group of diagram elements connected to tips of input edges of thereplacing node, of the binary decision diagram after the replacingcoinciding with a group of diagram elements connected to tips of inputedges of said plural nodes included in said one partial diagram to bereplaced, of the binary decision diagram before the replacing andlocated outside of said one partial diagram to be replaced; (e-2) thecontrol variable of the replacing node in the diagram after thereplacing being able to be expressed by logical combination of pluralcontrol variables of said plural nodes included in said one partialdiagram in the binary decision diagram before the replacing, so that alogic function of the binary decision diagram after the replacing isidentical to a logic function of the binary decision diagram before thereplacing; (f) determining another pass-transistor logic circuitcorresponding to said binary decision diagram after said replacing, saidanother pass-transistor logic circuit including a plurality ofpass-transistor circuits each corresponding to one of at least part ofnodes in the binary decision diagram after the replacing each passtransistor circuit being one defined in the paragraph (c-1), saidanother pass-transistor logic circuit adopting the following signalsupplying schemes; a first signal supplying scheme being adopted betweenfirst and second pass-transistor circuits, according to which firstsignal supplying scheme an input signal applied to a control input ofone pass transistor circuit is a signal of an output of other passtransistor circuit, a second signal supplying scheme being adoptedbetween the second pass-transistor circuit and a third pass-transistorcircuit, according to which second signal supplying scheme an inputsignal applied to either one of the first input and the second input ofone pass-transistor circuit is a signal of an output of other passtransistor circuit, said first pass-transistor circuit being onecorresponding to one of said group of nodes within said binary decisiondiagram after said replacing which supplies a control variable to saidone replacing node, said second pass-transistor circuit being onecorresponding to said one replacing node, said third pass-transistorcircuit being one corresponding to a node connected to one of two inputedges of said one replacing node; and (g) checking whether simulateddelay time of said another pass-transistor circuit meets the targetspecification.
 2. A method of designing a logic circuit to be integratedon semiconductor, as implemented by using a designing device comprisinga central processing unit, a memory device and a man-machine interfacedevice, characterized in that a program stored in the memory deviceexecutes the following steps of: (a) having logic functions beinginputted which are for determining logic relationship between logicinputs and logic outputs and a target specification of at least one ofan occupied circuit area and power consumption of the logic circuit; (b)forming a binary decision diagram as defined in the following paragraph(b-1) for at least part of the logic functions as inputted; (b-1) thebinary decision diagram being one formed by combining a plurality ofnodes each having a control variable, two input edges and one output,wherein the control variable of each node represents a logic input to arelevant logic portion, either one of the two input edges of each nodeis selected according a logical value of the control variable, and asignal applied to the selected input edge is transferred to the outputof the node; (c) determining a pass-transistor logic circuit whichincludes a plurality of pass-transistor circuits each corresponding toone of at least part of a plurality of nodes in the binary decisiondiagram formed in the step (b), each pass transistor circuit being onedefined in the following paragraph (c-1); (c-1) the pass transistorcircuit comprising a control input, a first input, a second input, anoutput, a first field effect transistor having a source-drain pathconnected between the first input and the output, and a second fieldeffect transistor having a source-drain path connected between thesecond input and the output, wherein a gate of the first field effecttransistor responds to a signal applied to the control input, a gate ofthe second field effect transistor responds to an inverted signal of thesignal applied to the control input, and a signal of either one of thefirst input and the second input is transferred to the output; (d)checking whether at least one of simulated occupied circuit area andsimulated power consumption of the pass transistor logic circuitobtained in the step (c) meets the target specification given in thestep (a), and executing the following steps (e), (f) and (g), if thetarget specification is not met; (e) replacing plural node groups in thebinary decision diagram with a plurality of replacing nodes eachcorresponding to one of said plural node groups and a group of sharednodes which are provided in common to said plurality of replacing nodesand provide a common control variable thereto, said plural node groupssatisfying the condition indicated in the following paragraph (e-1),said plurality of replacing nodes and said group of shared nodessatisfying conditions indicated in the following paragraphs (e-2) and(e-3); (e-1) each node group within said plural node groups before thereplacing comprising a plurality of nodes, wherein a mutual couplingform of said plurality of nodes of each node group and control variableprovided to said plurality of nodes of each node group of each nodegroup before the replacing are identical to each other node group andlocated outside of said corresponding node group; (e-2) an output of agroup of shared nodes to be applied as a control variable to said pluralreplacing nodes after the replacing being able to be determined, so thata logic function in the binary decision diagram after the replacing isidentical to a logic function of the binary decision diagram before thereplacing, wherein said plural nodes included in said group of sharednodes have the same mutual coupling form as said mutual coupling formand have the same plurality of control variables supplied as onessupplied to each of said plural node group; (e-3) a group of diagramelements connected to tips of input edges of each of said plurality ofreplacing nodes, of the diagram after the replacing coinciding with agroup of diagram elements connected to tips of input edges of acorresponding one of said plural node groups, of the binary decisiondiagram before the replacing and located outside of said correspondingnode group; (f) determining another pass-transistor logic circuitcorresponding to said binary decision diagram after said replacing, saidanother pass-transistor logic circuit including a plurality ofpass-transistor circuits each corresponding to one of at least part ofnodes included in the diagram after the replacing, each pass transistorcircuit being one defined in the paragraph (c-1), said anotherpass-transistor logic circuit adopting the following first and secondsignal supplying schemes; a first signal supplying scheme being adoptedbetween first and second pass-transistor circuits, according to whichfirst signal applying scheme an input signal applied to a control inputof one pass-transistor circuit is a signal of an output of otherpass-transistor circuit, a second signal supplying scheme being adoptedbetween the second pass-transistor circuit and a third pass-transistorcircuit, according to which second signal applying scheme an inputsignal applied to either one of the first input and the second input ofone pass transistor circuit is a signal of an output of other passtransistor circuit, said first pass-transistor circuit being onecorresponding to one of said group of shared nodes within said binarydecision diagram after said replacing which supplies a control variableto each of said plurality of replacing nodes, said secondpass-transistor circuit being one corresponding to said each replacingnode, said third pass-transistor circuit being one corresponding to anode connected to one of two input edges of said each replacing node;and (g) checking whether at least either one of a simulated occupiedcircuit area and simulated power consumption with said anotherpass-transistor logic circuit meets the target specification.
 3. Adesigning device comprising a central processing unit, a memory deviceand a man-machine interface device, the memory device storing a programwhich executes the following steps of: (a) having logic functions beinginputted which are for determining logic relationship between logicinputs and logic outputs and a target specification of delay timesbetween the logic inputs and the logic outputs; (b) forming a binarydecision diagram as defined in the following paragraph (b-1) for atleast part of logic functions as inputted; (b-1) the binary decisiondiagram being one formed by combining a plurality of nodes each having acontrol variable, two input edges and one output, wherein the controlvariable of each node represents a logic input to a relevant logicportion, either one of the two input edges of each node is selectedaccording a logical value of the control variable, and a signal appliedto the selected input edge is transferred to the output of the node; (c)determining a pass-transistor logic circuit which includes a pluralityof pass-transistor circuits each corresponding to one of at least partof a plurality of nodes in the binary decision diagram formed in thestep (b), each pass transistor circuit being one defined in thefollowing paragraph (c-1); (c-1) the pass transistor circuit comprisinga control input, a first input, a second input, an output, a first fieldeffect transistor having a source-drain path connected between the firstinput and the output, and a second field effect transistor having asource-drain path connected between the second input and the output,wherein a gate of the first field effect transistor responds to a signalapplied to the control input, a gate of the second field effecttransistor responds to an inverted signal of the signal applied to thecontrol input, and a signal of either one of the first input and thesecond input is transferred to the output; (d) checking whethersimulated delay time of the pass-transistor logic circuit obtained inthe step (c) meets the target specification given in the step (a), andexecuting the following steps (e), (f) and (g), if the targetspecification is not met; (e) replacing at least one partial diagramwhich includes plural nodes, in the binary decision diagram, with onereplacing node and a group of nodes which provide a control variable tosaid one node, said plural node groups satisfying the conditionindicated in the following paragraph (e-1), said one node and said groupof nodes satisfying conditions indicated in the following paragraphs(e-1) and (e-2); (e-1) a group of diagram elements connected to tips ofinput edges of the replacing node, of the binary decision diagram afterthe replacing coinciding with a group of diagram elements connected totips of input edges of said plural nodes included in said one partialdiagram to be replaced, of the binary decision diagram before thereplacing and located outside of said one partial diagram to bereplaced; (e-2) the control variable of the replacing node in thediagram after the replacing being able to be expressed by logicalcombination of plural control variables of said plural nodes included insaid one partial diagram in the binary decision diagram before thereplacing, so that a logic function of the binary decision diagram afterthe replacing is identical to a logic function of the binary decisiondiagram before the replacing; (f) determining another pass-transistorlogic circuit corresponding to said binary decision diagram after saidreplacing, said another pass-transistor logic circuit including aplurality of pass-transistor circuits each corresponding to one of atleast part of nodes in the binary decision diagram after the replacingeach pass transistor circuit being one defined in the paragraph (c-1),said another pass-transistor logic circuit adopting the following firstand second signal supplying schemes; a first signal supplying schemebeing adopted between first and second pass-transistor circuits,according to which first signal supplying scheme an input signal appliedto a control input of one pass transistor circuit is a signal of anoutput of other pass transistor circuit, a second signal supplyingscheme being adopted between the second pass-transistor circuit and athird pass-transistor circuit, according to which second signalsupplying scheme an input signal applied to either one of the firstinput and the second input of one pass-transistor circuit is a signal ofan output of other pass transistor circuit, said first pass-transistorcircuit being one corresponding to one of said group of nodes withinsaid binary decision diagram after said replacing which supplies acontrol variable to said one replacing node, said second pass-transistorcircuit being one corresponding to said one replacing node, said thirdpass-transistor circuit being one corresponding to a node connected toone of two input edges of said one replacing node; and (g) checkingwhether simulated delay time of said another pass-transistor circuitmeets the target specification.
 4. A designing device comprising acentral processing unit, a memory device and a man-machine interfacedevice, the memory device storing a program which executes the followingsteps of: (a) having logic functions being inputted which are fordetermining logic relationship between logic inputs and logic outputsand a target specification of at least one of an occupied circuit areaand power consumption of the logic circuit; (b) forming a binarydecision diagram as defined in the following paragraph (b-1) for atleast part of the logic functions as inputted; (b-1) the binary decisiondiagram being one formed by combining a plurality of nodes each having acontrol variable, two input edges and one output, wherein the controlvariable of each node represents a logic input to a relevant logicportion, either one of the two input edges of each node is selectedaccording a logical value of the control variable, and a signal appliedto the selected input edge is transferred to the output of the node; (c)determining a pass-transistor logic circuit which includes a pluralityof pass-transistor circuits each corresponding to one of at least partof a plurality of nodes in the binary decision diagram formed in thestep (b), each pass transistor circuit being one defined in thefollowing paragraph (c-1); (c-1) the pass transistor circuit comprisinga control input, a first input, a second input, an output, a first fieldeffect transistor having a source-drain path connected between the firstinput and the output, and a second field effect transistor having asource-drain path connected between the second input and the output,wherein a gate of the first field effect transistor responds to a signalapplied to the control input, a gate of the second field effecttransistor responds to an inverted signal of the signal applied to thecontrol input, and a signal of either one of the first input and thesecond input is transferred to the output; (d) checking whether at leastone of simulated occupied circuit area and simulated power consumptionof the pass transistor logic circuit obtained in the step (c) meets thetarget specification given in the step (a), and executing the followingsteps (e), (f) and (g), if the target specification is not met; (e)replacing plural node groups in the binary decision diagram with aplurality of replacing nodes each corresponding to one of said pluralnode groups and a group of share nodes which are provided in common tosaid plurality of replacing nodes and provide a common control variablethereto, said plurality of replacing nodes and said group of sharednodes satisfying conditions indicated in the following paragraphs (e-2)and (e-3); (e-1) each node group within said plural node groups beforethe replacing comprising a plurality of nodes, wherein a mutual couplingform of said plurality of nodes of each node group and control variablesprovided to said plurality of nodes of each node group of each nodegroup before the replacing are identical to each other node group andlocated outside of said corresponding node group; (e-2) an output of agroup of shared nodes to be applied as a control variable to said pluralreplacing nodes after the replacing being able to be determined, so thata logic function in the binary decision diagram after the replacing isidentical to a logic function of the binary decision diagram before thereplacing, wherein said plural nodes included in said group of sharednodes have the same mutual coupling form as said mutual coupling formand have the same plurality of control variables supplied as onessupplied to each of said plural node group; (e-3) a group of diagramelements connected to tips of input edges of each of said plurality ofreplacing nodes, of the diagram after the replacing coinciding with agroup of diagram elements connected to tips of input edges of acorresponding one of said plural node groups, of the binary decisiondiagram before the replacing and located outside of said correspondingnode group; (f) determining another pass-transistor logic circuitcorresponding to said binary decision diagram after said replacing, saidanother pass-transistor logic circuit including a plurality ofpass-transistor circuits each corresponding to one of at least part ofnodes included in the diagram after the replacing, each pass transistorcircuit being one defined in the paragraph (c-1), said anotherpass-transistor logic circuit adopting the following first and secondsignal supplying schemes; a first signal supplying scheme being adoptedbetween first and second pass-transistor circuits, according to whichfirst signal applying scheme an input signal applied to a control inputof one pass-transistor circuit is a signal of an output of otherpass-transistor circuit, a second signal supplying scheme being adoptedbetween the second pass-transistor circuit and a third pass-transistorcircuit, according to which second signal applying scheme an inputsignal applied to either one of the first input and the second input ofone pass transistor circuit is a signal of an output of other passtransistor circuit, said first pass-transistor circuit being onecorresponding to one of said group of shared nodes within said binarydecision diagram after said replacing which supplies a control variableto each of said plurality of replacing nodes, said secondpass-transistor circuit being one corresponding to said each replacingnode, said third pass-transistor circuit being one corresponding to anode connected to one of two input edges of said each replacing node;and (g) checking whether at least either one of a simulated occupiedcircuit area and simulated power consumption with said anotherpass-transistor logic circuit meets the target specification.